Studies on structural and optical properties of ZnSe and ZnSSe single crystals grown by CVT methodKANNAPPAN, P; DHANASEKARAN, R.Journal of crystal growth. 2014, Vol 401, pp 691-696, issn 0022-0248, 6 p.Conference Paper

On the influence of solution density on the formation of macroscopic defects in the liquid phase epitaxy of GaNHUSSY, S; BERWIAN, P; MEISSNER, E et al.Journal of crystal growth. 2008, Vol 311, Num 1, pp 62-65, issn 0022-0248, 4 p.Article

Morphological control of Mg_xZn_1―xO layers grown on Ga:ZnO/glass substrates for photovoltaicsZIQING DUAN; YICHENG LU; DU PASQUIER, Aurelien et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 190-193, issn 0022-0248, 4 p.Conference Paper

Growth conditions and surface morphology of AIN MOVPELOBANOVA, A. V; YAKOVLEV, E. V; TALALAEV, R. A et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 4935-4938, issn 0022-0248, 4 p.Conference Paper

Low-temperature RPCVD of Si, SiGe alloy, and Si_1―yC_y films on Si substrates using trisilane (Silcore^®)GOUYE, A; KERMARREC, O; HALIMAOUI, A et al.Journal of crystal growth. 2009, Vol 311, Num 13, pp 3522-3527, issn 0022-0248, 6 p.Article

Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVDCHEN, J; ZHANG, S. M; ZHANG, B. S et al.Journal of crystal growth. 2003, Vol 256, Num 3-4, pp 248-253, issn 0022-0248, 6 p.Article

Wet chemical etching of silicon {111} : Etch pit analysis by the Lichtfigur methodSHAH, Ismail A; VAN DER WOLF, Benjamin M. A; VAN ENCKEVORT, Willem J. P et al.Journal of crystal growth. 2009, Vol 311, Num 5, pp 1371-1377, issn 0022-0248, 7 p.Article

Effects of substrate temperature on the growth of C₆₀ polycrystalline films by physical vapor depositionCHENG, Wen-Rong; TANG, Shiow-Jing; SU, Yu-Ching et al.Journal of crystal growth. 2003, Vol 247, Num 3-4, pp 401-407, issn 0022-0248, 7 p.Article

Connection between GaN and InGaN growth mechanisms and surface morphologyKOLESKE, D. D; LEE, S. R; CRAWFORD, M. H et al.Journal of crystal growth. 2014, Vol 391, pp 85-96, issn 0022-0248, 12 p.Article

Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-planePIMPUTKAR, S; KAWABATA, S; SPECK, J. S et al.Journal of crystal growth. 2013, Vol 368, pp 67-71, issn 0022-0248, 5 p.Article

Epitaxial growth of InN films on lattice-matched EuN buffer layersSHIMOMOTO, K; OHTA, J; FUJII, T et al.Journal of crystal growth. 2009, Vol 311, Num 20, pp 4483-4485, issn 0022-0248, 3 p.Article

Investigations on the effect of InSb and InAsSb step-graded buffer layers in InAs_0.5Sb_0.5 epilayers grown on GaAs (00 1)NAKAMURA, S; JAYAVEL, P; KOYAMA, T et al.Journal of crystal growth. 2007, Vol 300, Num 2, pp 497-502, issn 0022-0248, 6 p.Article